InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

We demonstrate InAs/InGaAsP/InP quantum dot(QD)lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6μm width have been fabricated by standard optical lithography and wet etching.Under continuous wave operation at room temperature,a low threshold current density of 447 A/cm^(2)per QD layer is achieved for a QD laser with a cavity length of 2 mm.Moreover,the lasing redshifts from 1.61μm to 1.645μm as the cavity length increases from 1.5 mm to 4 mm.A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.