摘要
We demonstrate InAs/InGaAsP/InP quantum dot(QD)lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6μm width have been fabricated by standard optical lithography and wet etching.Under continuous wave operation at room temperature,a low threshold current density of 447 A/cm^(2)per QD layer is achieved for a QD laser with a cavity length of 2 mm.Moreover,the lasing redshifts from 1.61μm to 1.645μm as the cavity length increases from 1.5 mm to 4 mm.A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.
作者
罗帅
季海铭
高凤
杨晓光
梁平
赵玲娟
杨涛
LUO Shuai;JI Hai-Ming;GAO Feng;YANG Xiao-Guang;LIANG Ping;ZHAO Ling-Juan;YANG Tao(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61176047,61076050,61204057 and 61204076
the National Basic Research Program of China under Grant No 2012CB932701.