摘要
High quality silicon on insulator(SOI)materials have been successfully produced using the unibond method,a new member of SOI technology.The quality of SOI samples has been investigated by using cross-section transmission electron microscopy,Rutherford backscattering and channeling spectrometry and spreading resistance probe technology.Experimental results indicate that both the thickness uniformity and the crystalline quality of the top Si layer are good.The interface between the top Si layer and SiO2 buried layer is very sharp and straight.
作者
张苗
竺士炀
李金华
倪如山
林成鲁
ZHANG Miao;ZHU Shi-yang;LI Jin-hua;NI Ru-shan;LIN Cheng-lu(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050;Department of Electronic Engineering,Fudan University,Shanghai 200050;Jiangsu Petrochemical Industry College,Changzhou 213016)
