摘要
The derivative-dN(t)/dlgt of photo-induced excess electrons N(t)in GaAs-Al_(0.3)Ga_(0.7)As and In_(0.15)Ga_(0.85)As-Al_(0.2)Ga_(0.8)As heterostructures with respect to 1gt shows a spectrum with pronounced peak-structure.The apparent capture energies,the lifetime prefactors,the apparent lifetime distribution,and the derivative decay quantities of individual lifetimes were analyzed to distinguish capture mechanisms.
作者
何礼熊
HE Li-xiong(National Laboratory for Semiconductor Superlattices and Microstructures,Beijing 100083;Department of Electronic Science and Applied Physics,Fuzhou University,Fuzhou 350002)
基金
Supported by the State Education Commission of China
the Fujian Provincial Science Foundation.
