摘要
Hydrogenated nanocrystalline silicon nitrogen(nc-SiN_(x):H)films were prepared by rf glow discharge of gas mixture of silane(SiH_(4))and nitrogen(N_(2))diluted heavily by hydrogen(H_(2)).The effect of the gas volume ratios X_(g) of(SiU_(4)+N_(2))/H_(2) and X_(N)of N_(2)/SiH_(4) on the crystallization and composition of films is described.The growth process and crystallization mechanism of nc-SiN_(x):H films are discussed in detail.
基金
Supported in part by the National Postdoctoral Foundation of China.
