摘要
Switching behaviour of polycrystalline diamond thin films is reported.Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate.Dependence of switching behaviour on boron impurity has been investigated.The threshold voltage obviously decreases with increasing content of boron dopant.
作者
WANG Xiao-ping
WANG Li-jun
XU Yue-e
SHEN Shu-po
王小平;王丽军;许月娥;沈书泊(Department of Applied Science,Zhengzhou Institute of Aeronautical Industrial Management,Zhengzhou 450052;Institute of Physics Engineering,Zhengzhou University,Zhengzhou 450052)
