摘要
The size distribution of Si-nanocrystals(Si-ncs)in evenly annealed SiO is investigated with transmission electron microscopy(TEM),x-ray diffraction(XRD),and Raman scattering.Two groups of Si-ncs with very different most probable diameters are identified,where one is>6nm and the other one is<2nm.Both of them increase gradually with increasing annealing temperature.Such a phenomenon is observed directly by TEM for samples with larger Si-ncs(>10nm)and it can be revealed clearly for all samples by Raman spectra with two components(~500cm^(-1)and~520cm^(-1)).The results of XRD show the average effect.The experimental results indicate that the common assumption of Si-nc size distribution with single most probable diameter is not always proper and the possible mechanisms are briefly discussed.
作者
柯伟伟
冯雪
黄翊东
KE Wei-Wei;FENG Xue;HUANG Yi-Dong(State Key Laboratory of Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084)
基金
Supported in part by the National Basic Research Program of China under Grant Nos 2011CBA00608 and 2007CB307004
the National Natural Science Foundation of China under Grant Nos 60877023 and 61036010.
