摘要
A systematic study of the charge transport and electrical properties in poly(3-hexylthiophene) (P3HT) polymer layers is performed.We demonstrate that the temperature-dependent current-voltage J (V,T) characteristics of hole-only devices based on P3HT can be accurately described using the recently introduced extended Gaussian disorder model (EGDM).A particular numerical method adopting the uneven discretization and Newton iteration method is used to solve the coupled equations describing the space-charge limited (SCL) current in conjugated polymers.For the polymer studied,we find the width of the density of states σ =0.1 eV and the lattice constant a =1.15nm.Based on the numerical method and EGDM,we further calculate and analyze some important electrical properties for P3HT in detail,including the variation of current-voltage characteristics with the boundary carrier density and the distribution of charge-carrier density and electric field with the distance from interface.
基金
Supported by the National Basic Research Program of China under Grant No 2007CB310407
the Foundation for Innovative Research Groups of the National Natural Science Foundation of China under Grant No 61021061
the National Natural Science Foundation of China under Grant Nos 50972023,61001025,and 61071028
the International S&T Cooperation Program of China under Grant No 2006DFA53410.
