摘要
A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance.Compared with the conventional ZnO thin-film transistor structure,the novel thinfilm transistor has a higher on-state current,steeper sub-threshold characteristics and a lower threshold voltage,owing to the double-gate and high-k dielectric.Based on two-dimensional simulation,the potential channel distribution and the reasons for the improvement in performance are investigated.
作者
高海霞
胡榕
杨银堂
GAO Hai-Xia;HU Rong;YANG Yin-Tang(School of Microelectronics,Xidian University,Xi’an 710071)
基金
Supported by the National Natural Science Foundation of China for Distinguished Young Scholars under Grant No 60725415
the Fundamental Research Funds for the Central Universities under Grant No K50510250001.