摘要
Nonpolar (1120) and semipolar (1122) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the density of BSFs for the semipolar (1122) and nonpolar a-plane GaN template is 3×10^(5) cm^(-1) and 8×10^(5) cm^(-1),respectively.The semipolar (1122) GaN shows an arrowhead-like structure,and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis.Both nonpolar (11(2)0) and semipolar (1122) GaN have very strong BSF luminescence due to the optically active character of the BSFs.
作者
许晟瑞
林志宇
薛晓咏
刘子扬
马俊彩
姜腾
毛维
王党会
张进成
郝跃
XU Sheng-Rui;LIN Zhi-Yu;XUE Xiao-Yong;LIU Zi-Yang;MA Jun-Cai;JIANG Teng;MAO Wei;WANG Dang-Hui;ZHANG Jin-Cheng;HAO Yue(Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071)
基金
Supported by the Fundamental Research Funds for the Central Universities under Grant No K50511250002
the National Key Science&Technology Special Project under Grant No 2008ZX01002-002
the Major Program and State Key Program of the National Natural Science Foundation of China under Grant Nos 60890191 and 60736033.
