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The Growth of Semi-Polar ZnO (1011) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition

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摘要 Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500℃.X-ray (O) scanning indicates that there are six kinds of in-plane domain growths,with the ZnO [1012] parallel to the Si (11(2)〉 direction families.The crystallographic orientation of ZnO is supposed to be caused by surface passivation.The methanol,as a polar molecule,may be adsorbed on the Si (111) surface to form a passivation layer,which inhibits the (0001) ZnO plane deposition on the substrate surface,and as a result the ZnO (1011) plane becomes preferred.The optical properties,examined by a roomtemperature photoluminescence spectrum,exhibit a strong near-band-edge emission peak at 379nm,indicating that the (1011) ZnO film has good crystal quality.These results are significant for research into and for the applications of semi-polar ZnO films.
作者 SANG Ling WANG Jun SHI Kai WEI Hong-Yuan JIAO Chun-Mei LIU Xiang-Lin YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-GuoKey Laboratory of Semiconductor Materials Science Institute of Semiconductors 桑玲;王俊;时凯;魏鸿源;焦春美;刘祥林;杨少延;朱勤生;王占国(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第1期264-267,共4页 中国物理快报(英文版)
基金 Supported by the National Science Foundation of China under Grant Nos 61006004,60976008 and 10979507 the National Basic Research Program of China under Grant No A000091109-05 the National High-Technology R&D Program of China under Grant No 2011AA03A101.
关键词 PLANE METHANOL POLAR
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