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Reactive Deposition Epitaxial Growth ofβ-FeSi_(2) Film on Si(001):in situ Observation by Reflective High Energy Electron Diffraction 被引量:2

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摘要 Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface roughness due to the islanding was observed during the deposition.The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1995年第10期613-616,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of Shanghai,the People's Republic of China,No.94JC14006.
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