摘要
GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).
基金
the National Natural Science Foundation of China under Grant Nos 51072078 and 61076008
the National Basic Research Program of China under Grant No 2010CB630704
the College Graduate Research and Innovation Project of Jiangsu Province under Grant No CXZZ12_0050.
