Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO_(2) Film/p-Si Structures

We have studied the effects ofγ-ray irradiation on electroluminescence(EL)from Au/extra thin Si-rich SiO_(2) film/p-Si Structures.Afterγ-ray irradiation,for the structure with a 600℃ annealed Si-rich SiO_(2) film a new blue EL band with a peak at around 480nm was observed,and for the structure with a 300℃ annealed Si-rich SiO_(2) film the red EL band shifts from 670 to 660nm and its intensity and full width at half maximum increase pronouncedly.The experimental results demonstrate that the defects induced byγ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.