摘要
A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz,based on the tirne-dependent,nonlinear steady-state response to the applied electric field.It is found that although at low temperature(T=10 K)the dc mobility of the systems is suppressed by the intense radiation field,in agreement with the available experimental observation,the effect can be reversed at elevated temperature.At T=77 and 300 K,the dc mobility of the GaAs system turns out to be enhanced with the increasing strength of the ac field when its amplitude is large than a threshold value.
作者
CHEN Yi-qiao
LEI Xiao-lin
陈意桥;雷啸霖(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy Chinese Academy of Sciences,Shanghai 200050)
基金
Supported by the National Natural Science Foundation of China under Grant No.19774061
the National and Shanghai Commissions of Science and Technology of China
the Shanghai Foundation for Research and Development of Applied Materials.
