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Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation

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摘要 Positron lifetime spectra were measured for three Zn doped p-InP samples as a function of temperature. Interaction of Zn dopants and native P vacancies was observed under thermal activation. It is found that the formation of Zn-Vp complex has a correlation with the carrier concentration. The formation mechanism of the complex was tentatively discussed.
作者 陈志权 王柱 王少阶 CHEN Zhi-quan;WANG Zhu;WANG Shao-jie(Department of Physics,Wuhan University,Wuhan 430072)
机构地区 Department of Physics
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第8期586-588,共3页 中国物理快报(英文版)
基金 the National Natural Science Foundation of China under Grant No.69576020.
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