摘要
Amorphous CN:Ti films deposited by using the reactive magnetron sputtering method were annealed in vacuum under 200 to 600℃. Incorporation of Ti (less than 3at.%) has brought some new perspectives to the material. Electron-energy-loss spectrum indicates improved conductivity in CN:Ti films as in the insulating CN films. The high-resolution core-level x-ray photoelectron spectroscopy (XPS) studies show that most carbon atoms form homeopolar bonding in as-deposited CN:Ti film. While the N Is line always shrinks with increasing annealing temperature, the total full width at half maximum of C Is line decreases only at annealing temperature over 300℃ when the broadening due to heterobonding formation is outdone by the effect of increasing order. An enhanced π-band feature in the valence-XPS spectra at high annealing temperatures confirms the graphitization tendency of this material.
作者
CAO Ze-xian
GUO Jian-dong
WANG En-ge
LIU Feng-qin
曹则贤;郭建东;王恩哥;刘凤琴(State Key Laboratory for Surface Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing)
基金
the Volkswagen-Foundation,Germany,under the grant number 174701
the K.C.Wong Education Foundation,Hong Kong.