摘要
Cubic boron nitride films have been synthesized using thermally assisted rf plasma chemical vapour deposition (CVD) with a tungsten filament in the reactive gasses of B_(2)H_(6) and NH_(3). The films obtained are of good quality and are characterized by transmission electron microscope, infrared absorption measurement and electron energy loss spectrometry. Experimental results showed that the structure and quality of cubic boron nitride films closely depend on the growth conditions of the films.
