摘要
Nitrogen doping is applied to improve the thermal stability of SnTe.The crystallization temperature Tc of SnTe is below room temperature,which can be elevated to 216℃ by 7.65at.%nitrogen doping.Nitrogen doping results in the formation of SnNx in the nitrogen doped SnTe(N-SnTe)materials,which hinders the movement of atoms and suppresses the crystallization,leading to a better thermal stability.The crystallization activation energy(Ea)and data retention for ten years of 7.65at.%N-SnTe are 1.89 eV and 81℃,respectively.Moreover,the voltage pulses have successfully triggered the SET and RESET operations of the N-SnTe based device at the voltage of 0.9 V and 2.6 V.The good thermal stability and reversible phase-change ability have proved the potential of N-SnTe for phase-change memory application.
作者
夏梦姣
饶峰
宋志棠
任堃
吴良才
刘波
封松林
XIA Meng-Jiao;RAO Feng;SONG Zhi-Tang;REN Kun;WU Liang-Cai;LIU Bo;FENG Song-Lin(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences,Shanghai 200050;University of Chinese Academy of Sciences,Beijing 100049)
基金
Supported by the National Basic Research Program of China under Grant Nos 2010CB934300,2011CBA00607,2011CB9328004
the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003
the National Nat-ural Science Foundation of China under Grant Nos 60906004,60906003,61006087,61076121,61176122,61106001
the Science and Technology Council of Shanghai under Grant Nos 11DZ2261000,1052nm07000,11QA1407800
the Chinese Academy of Sciences under Grant No 20110490761.
