摘要
Nitrogen doping is applied to improve the thermal stability of SnTe.The crystallization temperature Tc of SnTe is below room temperature,which can be elevated to 216℃ by 7.65at.%nitrogen doping.Nitrogen doping results in the formation of SnNx in the nitrogen doped SnTe(N-SnTe)materials,which hinders the movement of atoms and suppresses the crystallization,leading to a better thermal stability.The crystallization activation energy(Ea)and data retention for ten years of 7.65at.%N-SnTe are 1.89 eV and 81℃,respectively.Moreover,the voltage pulses have successfully triggered the SET and RESET operations of the N-SnTe based device at the voltage of 0.9 V and 2.6 V.The good thermal stability and reversible phase-change ability have proved the potential of N-SnTe for phase-change memory application.
基金
Supported by the National Basic Research Program of China under Grant Nos 2010CB934300,2011CBA00607,2011CB9328004
the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003
the National Nat-ural Science Foundation of China under Grant Nos 60906004,60906003,61006087,61076121,61176122,61106001
the Science and Technology Council of Shanghai under Grant Nos 11DZ2261000,1052nm07000,11QA1407800
the Chinese Academy of Sciences under Grant No 20110490761.
