摘要
A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.
作者
JIN Xiao-Shi
LIU Xi
KWON Hyuck-In
LEE Jong-Ho
靳晓诗;刘溪;KWON Hyuck-In;LEE Jong-Ho(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110023;School of Electrical and Electronics Engineering,Chung-Ang University,Seoul 156-756,Korea;School of EECS Engineering and ISRC(Inter-University Semiconductor Research Center),Seoul National University,Shinlim-Dong,Kwanak-Gu,Seoul 151-742,Korea)
基金
Supported by the Fund of Liaoning Province Education Department under Grant No L2012028.
