摘要
A novel single-crystalline Si/poly-CoSi_(2)/SiO_(2)/Sub-Si structure has been successfully formed by silicon wafer bonding technique.The surface energy of the as-bonded wafers at room temperature is about 70erg/cm^(2).Annealing at 800°C for 30min does not only strengthen the bond to about 1100erg/cm^(2),but also employs solid phase reaction of sputtered cobalt to form a buried poly-crystalline CoSi_(2)layer with a resistivity of approximately 160μΩ.cm.Two bond processes has been compared.The quality of the sputtered Si-SiO_(2)bonding is better than that of the sputtered Si-Si bonding.
基金
Supported by the Science and Technology Development Foundation of Shanghai under Grant No.98JC14004.
