Structural and Photoluminescence Characterization of GaN Film Grown on Si(111)Substrate

GaN epilayer grown on Si(111)substrate by a novel vacuum reaction method rather than metal organic chemical vapor deposition or molecule beam epitaxy is reported.Scanning electron micrograph shows that surface of GaN film is flat and crack-free.A pronounced GaN(0002)peak appears in the x-ray diffraction pattern.The full width at half-maximum(FWHM)of the double-crystal x-ray rocking curve for(0002)diffraction from the GaN epilayer is 30arcmin.The photoluminescence spectrum shows that the GaN epilayer emits light at the wavelength of 365nm with an FWHM of 8nm(74.6meV).