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Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution

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摘要 Red-emitting at about 640nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated.A doublepeak structure of photoluminescence(PL)spectra from quantum dots was observed,and a bimodal distribution of dot sizes was also confirmed by an atomic force micrograph(AFM)image for uncapped sample.From the temperature and excitation intensity dependence of PL spectra,it is found that the double-peak structure of PL spectra from quantum dots is strongly correlated to the two predominant quantum dot families.Taking into account the quantum-size effect on the peak energy,it is proposed that the high(low)energy peak results from a smaller(larger)dot family,and this result is identical to the statistical distribution of dot lateral size from the AFM image.
作者 周伟 徐波 许怀哲 刘峰奇 龚谦 姜卫红 孙中哲 丁鼎 梁基本 王占国 朱作明 李国华 ZHOU Wei;XU Bo;XU Huai-zhe;LIU Feng-qi;GONG Qian;JIANG Wei-hong;SUN Zhong-zhe;DING Ding;LIANG Ji-bei;WANG Zhan-guo;ZHU Zuo-ming;LI Guo-hua(Laboratory of Semiconductor Materials Science,Chinese Academy of Sciences,Beijing 100083;National Laboratory for Superlittices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第4期298-300,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No.69736010 the National Advanced Materials Committee of China(715-014-0040).
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