摘要
Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa_(x)Sb_(1-x) semiconductor symmetric well is theoretically studied using transfer matrix formulism.The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium.Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed.Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration.
基金
Supported by the CSIR,India under Grant No 03(1159)/10/EMR-II.