Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa_(x)Sb_(1-x) semiconductor symmetric well is theoretically studied using transfer matrix formulism.The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium.Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed.Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration.