基于粒子群优化算法提取GaN HEMTs外部寄生参数

External parasitic parameters of GaN HEMTs extracted based on particle swarm optimization algorithm

GaN HEMTs作为第三代半导体器件,它的工作频率高,功率密度大,而且耐高温、高压,不仅是功放控制电路中的重要组成部分,也是毫米波时代5G无线通信电路中的理想射频功率器件。基于GaN HEMTs器件的19参数小信号等效电路模型,提出了一种在冷场条件下,利用粒子群优化算法(PSO)获取器件小信号模型的外部寄生参数的方法。最后通过对比不同尺寸GaN HEMTs器件在冷场偏置条件下的实际测量和仿真S参数验证了该方法的有效性。

As a third-generation semiconductor device,GaN HEMTs have high operating frequency,high power density,high temperature and high voltage resistance.They are not only the important part of power amplifier control circuit,but also the ideal RF power device in 5G wireless communication circuit in the era of millimeter-wave.Based on the 19-parameter small-signal equivalent circuit model of GaN HEMTs,a method of obtaining external parasitic parameters of the small-signal model of GaN HEMTs by particle swarm optimization(PSO)in cold field was proposed.Finally,the effectiveness of the proposed method was verified by comparing the actual measurement and simulation S parameters of GaN HEMTs with different sizes in the cold field bias condition.