V波段3W GaN功率放大器MMIC

V-Band 3 W GaN Power Amplifier MMIC

以50μm厚的SiC为衬底,基于T型栅GaN HEMT工艺技术,设计并制作了一款V波段GaN功率放大器单片微波集成电路(MMIC)。该功率放大器MMIC电路采用三级放大拓扑结构进行设计;采用高低阻抗微带传输线进行阻抗匹配和片上功率合成;采用介质电容和薄膜电阻进行偏置网络设计,实现稳定工作和低损耗输出。经测试,在55~65 GHz频带内,漏极工作电压+20 V、栅极工作电压-2.3 V的偏置条件下,在占空比20%、脉宽100μs脉冲状态时,该功率放大器MMIC的饱和输出功率达到3 W以上,功率附加效率达到22%;连续波状态时,其饱和输出功率达到2.5 W以上,60 GHz时最高功率达到3 W。

A V-band GaN power amplifier monolithic microwave integrated circuit(MMIC) was designed and fabricated based on T-gate GaN HEMT technology with the SiC substrate of 50 μm thickness.The power amplifier MMIC circuit was designed with a three-stage amplifier topology.The high and low impedance microstrip transmission lines were used for impedance matching and on-chip power synthesis.The dielectric capacitor and film resistor were used for bias network to realize stable operation and low loss output.The test results show that in the 55-65 GHz frequency range, under the bias conditions of drain operation voltage of +20 V and gate operation voltage of-2.3 V,the power amplifier MMIC achieves a saturated output power of greater than 3 W and a power added efficiency of 22% in the pulse state with a duty cycle of 20% and a pulse width of 100 μs.In the continuous wave state, its saturated output power reaches greater than 2.5 W and a maximum power of 3 W at 60 GHz.