0.20μm双埋氧SOI NMOSFET的自热效应

Self-Heating Effect of 0.20 μm Double SOI NMOSFETs

研究了一种新型双埋氧绝缘体上硅(DSOI)NMOSFET的自热效应(SHE)。通过实验测试并结合计算机数值模拟分析了SHE对DSOI NMOSFET输出特性的影响。仿真结果显示DSOI NMOSFET的背栅引出结构形成了额外的散热通道。重点研究了器件电压和环境温度对SHE的影响,结果表明随着漏极和栅极电压的增加,器件体区晶格温度升高,SHE增强;随着环境温度的升高,退化电流降低,SHE减弱。此外,重点分析了背栅偏置电压对器件SHE的影响,研究发现负的背栅偏置电压对全耗尽绝缘体上硅和DSOI NMOSFET的SHE均表现出抑制效果,且DSOI NMOSFET的背栅展现出了更好的抑制效果。

The self-heating effect(SHE) of a new type of double silicon on insulator(DSOI) NMOSFETs was investigated.The influence of the SHE on the output characteristics of DSOI NMOSFETs was analyzed through experimental tests and computer numerical simulation.The simulation results show that the back gate structure derived from the DSOI NMOSFETs forms an additional heat dissipation channel.The impacts of device voltages and ambient temperature on the SHE were emphatically studied.The results show that with the increase of drain and gate voltages, the body lattice temperature increases and the SHE enhances.With the increase of ambient temperature, the degradation current decreases and the SHE weakens.In addition, the effect of the back gate bias voltage on the SHE of the device was analyzed emphatically.It is found that the negative back gate bias voltage can suppress the SHE of both fully depleted silicon on insulator and DSOI NMOSFETs, and the back gate of DSOI NMOSFETs shows better suppression effect.