钛掺杂氧化镍基电阻存储薄膜的电学性能研究

The Study of Electical Property of Ti-doped NiO_(x) Resistive Memory Thin Films

采用溶胶-凝胶法与化学修饰法相结合的方法制备感光性钛掺杂氧化镍基溶胶及凝胶膜,对凝胶膜热处理,然后测试其电学性能。测试结果表明:热处理温度为300℃时,Ti掺杂NiO_(x)薄膜具有明显的双极性电阻开关性能。且随着Ti摩尔掺杂量的增加,薄膜的复位电压有变化。当摩尔掺杂量n(Ni)/n(Ti)=92:8时,NiO_(x)薄膜的复位电压最小。

Photosensitive gel films of Ti-doped NiO_(x)were prepared by sol-gel method with chemical modification.After heat treatment,electrical property of Ti-doped NiO_(x)thin films were measured.Measurement results indicated that when the heat treatment temperature is 300℃,the films have bipolar resistive switching characteristic.Mol mass of Ti-doped increased,while reset voltage of films varied.When Mol mass of Ni and Ti is 92:8,thin film has the minimum reset voltage.