有源光缆的硅基90°转向芯片设计与制备

Design and Fabrication of Silicon-Based 90-Degree Beam-Steering Chip for Active Optical Cables

从垂直腔激光器阵列到光纤阵列的高效耦合一直是高速有源光缆制备过程中的挑战。基于界面光波传输的相位匹配,根据界面的折射率的分布及波动传输方程,设计了41°转向角度的微反射镜。基于各向异性晶体蚀刻仿真,得到具有特定晶体取向的硅基微结构。在研究制备工艺的方法中,通过在含异丙醇有机添加剂的氢氧化钾溶液中硅各向异性湿法蚀刻制备了具有41°微反射镜的V型槽阵列,异丙醇表面活性剂在氢氧化钾溶液蚀刻硅过程中起关键作用。然后对获得的芯片进行表面粗糙度、轮廓和反射率的表征及测试,探索了膜层(TFCalc)的SiO_(2)/Si高反射率介电膜的作用及效果,测试结果表明:所研制的芯片的反射率近100%,最高耦合效率在762 nm处,达92%。

High-efficiency coupling from vertical-cavity surface-emitting laser arrays(VCSELs)to fiber arrays has always been a challenge in the manufacture process of high speed active optical cables.Based on the phase matching of interface light wave transmission,according to the refractive index distribution and wave propagation equation of interface,a 41°Micro mirror with steering angle was made.Based on the anisotropic crystal etching simulation(ACES),the silicon-based microstructure with specific crystal orientation was obtained.In the process of preparation industry,the silicon anisotropic wet etching method was used to prepare the silicon with 41°Isopropanol surfactant which plays a key role in etching silicon in KOH solution.Then,the surface roughness,profile and reflectivity of the chip were characterized and tested,and the function and effect of the SiO_(2)/Si high reflectivity dielectric film(TFCalc)were explored.The results show that the reflectivity of the chip is nearly 100%,and the highest coupling efficiency is at 762 nm,which can reach 92%.