点缺陷对4H-SiC的影响

Effect of Point Defect on 4H-SiC

碳化硅(SiC)是一种新型的宽禁带半导体材料,但在实际生产过程中存在各种缺陷。通过第一性原理平面波法计算了4H-SiC薄膜上的碳空位缺陷(V_(C))和硅空位缺陷(V_(Si))的态密度从而得出不同缺陷对4H-SiC材料的影响。并在此基础上计算了磷原子和硼原子掺杂,得出两种不同的掺杂类型对4H-SiC材料造成的影响;并计算了缺陷的形成能,通过对比形成能得出哪种缺陷更容易形成。

SiC is a new type of wide band gap semiconductor material,but there are various defects in the actual production of SiC.In this paper,the density of carbon vacancy defects(V_(C))and silicon vacancy defects(V_(Si))on 4H-SiC films is calculated by the first principle plane wave method.On this basis,the doping of phosphorus and boron atoms was calculated,and the influence of two different doping types on 4H-SiC materials was obtained.At the same time,the forming energy of the defect is calculated.