一种基于高肖特基势垒的高性能隧穿场效应晶体管

A High Performance Tunneling Field Effect Transistor Based on High Schottky Barrier

为提升隧穿场效应晶体管的正向导通性能,有效降低晶体管的体积,根据TFET与SB MOSFET的结构优势提出一种基于高肖特基势垒的高性能隧穿场效应晶体管。提出带有等号形主控制栅的中央辅助控制栅结构,利用肖特基势垒来阻挡反向漏电流的同时,在导通机制上尽可能提高电子势垒的高度来减少热电子发射电流的产生。通过增大体硅与源漏电极接触面积提升正向导通电流,并且在体硅中间增加中央控制辅助栅极以阻挡反向泄漏电流。仿真实验结果表明该种设计实现了更好的器件特性。

In order to improve the forward conduction performance of tunneling field effect transistor and effectively reduce the size of the transistor,a high performance tunneling field effect transistor based on high Schottky barrier is proposed according to the structural advantages of TFET and SBMOSFET.A central auxiliary control gate structure with equal-sign-shaped main control gates is proposed.Schottky barrier is used to block reverse leakage current,and the height of electronic barrier is increased as much as possible in the conduction mechanism to reduce the generation of thermionic emission current.The forward conduction current is increased by increasing the contact area between the bulk silicon and the source and drain electrodes,and the central control auxiliary gate is added in the bulk silicon to block the reverse leakage current.Simulation results show that this design achieves better device characteristics.