超级结JBS二极管特性的仿真分析

Simulation Analysis of Super Junction JBS Diode Characteristics

为实现反向阻断特性和正向导通压降的折衷优化、提高单极型二极管功率,通过增加结型势垒控制肖特基二极管P柱区域结深,在JBS二极管中引入超级结结构。以300V耐压超级结JBS二极管为例分析其工作原理并建立模型,使用Silvaco软件对其反向阻断特性、正向导通特性、反向恢复特性进行仿真。通过仿真得出的反向阻断特性分析超级结结构对二极管器件中二维电场分布的影响,并结合仿真,阐述JBS二极管的结构及工作特色,论证其相比于肖特基二极管、JBS二极管的优势所在,为新型功率二极管的设计提供参考思路。

By increasing the junction barrier to control the junction depth of P-pillar region of Schottky diode,the super junction structure is introduced into JBS diode to optimize the tradeoff between reverse blocking characteristics and forward conduction voltage drop and to mprove the power of unipolar diode.Taking 300V withstand voltage super junction JBS diode as an example,the working principle is analyzed and the model is established.The reverse blocking characteristics,forward conduction characteristics and reverse recovery characteristics are simulated by Silvaco software.The influence of super junction structure on two-dimensional electric field distribution in diode devices is analyzed through the reverse blocking characteristics obtained from simulation.Combined with simulation,the structure and working characteristics of JBS diode are expounded,and its advantages over Schottky diode and JBS diode are demonstrated,which provides reference ideas for the design of new power diodes.