一种宽温度范围的低温度系数带隙基准源设计

Design of a low temperature coefficient bandgap reference with a wide temperature range

为了满足不同应用和市场对物联网芯片精度和可靠性的要求,提出了一款宽温度范围的低温度系数带隙基准源。在传统的Banba型带隙基准源结构上,采用高阶温度补偿技术和分段温度补偿技术改善输出基准电压的曲率,降低了电路的温度系数,同时扩展了电路的工作温度范围。基于TSMC 180 nm CMOS工艺,完成了电路性能验证。测试结果表明,电路在-40℃~160℃温度范围内的温度系数低至7.2×10^(-6)/℃,低频时电源抑制比为-48.52 dB,1.8 V电源电压下电路的静态电流为68.38μA,芯片核心面积为0.025 mm^(2)。

In order to meet the requirements of different applications and markets for the accuracy and reliability of IoT chips,a low temperature coefficient bandgap reference with a wide temperature range is proposed.On the basis of the traditional Banba bandgap reference structure,the circuit utilizes high-order temperature compensation technology and piecewise temperature compensation technology to improve the curvature of the output reference voltage.The temperature coefficient of the circuit is reduced.At the same time,the operating temperature range of the circuit is extended.The circuit performances are verified in the TSMC 180 nm CMOS process.Test results show that the temperature coefficient of the circuit is as low as 7.2×10^(-6)/℃in the range of-40℃to 160℃.The power supply rejection ratio at a low frequency is-48.52 dB.The static current under the 1.8 V power supply voltage is 68.38μA,and the core area of the chip is 0.025 mm^(2).