CdS紫外探测器芯片的制备研究

Preparation of a CdS Ultraviolet Detector

针对紫外探测器在紫外-红外双色探测器中的工程化应用需求,开展了 Pt/CdS肖特基紫外探测器研究,通过对CdS晶片表面处理工艺、Pt电极制备及紫外芯片退火等关键技术进行优化研究,并对Pt/CdS肖特基紫外探测器性能进行测试分析。测试结果表明:Pt/CdS肖特基紫外探测器在0.3~0.5 μm下响应率大于0.2A/W,对3~5 μm红外波长的平均透过率大于80%,很好地满足了紫外-红外双色探测器中的工程化应用要求。

A Pt/CdS Schottky UV detector was developed and studied based on the engineering application requirements of UV/IR dual-colored detectors.Key technologies such as the chip wafer surface treatment process for CdS,preparation process of the Pt electrode,and annealing of the UV detector chip were studied.The performance of the Pt/CdS Schottky UV detector was also analyzed.The results suggested a photo response rate of more than 0.2 A/W for wavelengths of 0.3-0.5 μm and an average transmittance of more than 80% for wavelengths of 3-5 μm,which meet the engineering requirements of UV/IR dual-color detectors.