InGaN/GaN耦合量子阱结构光电性质改善的物理机制

Physical Mechanism of Improved Photoelectric Properties of InGaN/GaN Coupled Quantum Wells

利用数值模拟方法,研究InGaN/GaN耦合量子阱结构光电性质相对传统量子阱结构光电性质改善的物理机制。模拟结果显示,与InGaN/GaN传统量子阱相比,耦合量子阱结构的电压-电流特性得到有效改善,获得较高发光强度和光输出功率。其光电性质改善的主要机制是:InGaN/GaN耦合量子阱结构能够减小电场强度、势垒高度和厚度,从而加强阱中载流子隧穿效应,改善有源区载流子分布均匀性,同时,阱层中电子-空穴波函数重叠率也得到提高。

The physical mechanism of the photoelectric properties of InGaN/GaN coupled quantum wells superior to the traditional quantum wells is studied by numerical simulation.The simulation results show that compared with InGaN/GaN traditional quantum wells,the voltage current characteristics of the coupled quantum wells are effectively improved,and higher luminous intensity and optical output power obtained.Specifically,the InGaN/GaN coupled quantum wells structure reduces the electric field intensity and barrier height and thickness so that the carrier tunneling effect in the wells is strengthened,the carrier distribution uniformity in the active region improved,and the overlap rate of electron hole wave function in the well layer enhanced.