期刊文献+

熔盐法制备片状氧化铝的影响因素研究 被引量:2

Study on the Factors Affecting the Preparation of Flake Alumina by Molten Salt
下载PDF
导出
摘要 片状氧化铝的性能优良,目前广泛应用于陶瓷增强材料、化妆品、珠光颜料等领域。本文以硫酸铝和硫酸铝铵为原料,以氯化钾为熔盐,利用熔盐合成法制备片状氧化铝,研究了不同氧化铝源、煅烧温度和熔盐的含量对片状氧化铝形貌和晶型的影响,结果显示氯化钾与硫酸铝物质量的比值为12︰1,煅烧温度为1000℃,保温时间为4小时,得到了α晶型的六角形片状氧化铝,且形貌规则。 Flake alumina has excellent properties, It has been widely used in various fields, such as ceramic reinforced material, pearlescent pigment, and so on.Flake aluminium oxide was prepared by molten salt synthesis method, aluminium sulfate and aluminum ammonium sulfate was chosen as raw materials, potassium chloride as the molten salt. The effect of different aluminum source, calcination temperature and molten salt content on morphology and crystal form of flake aluminum was studied in this article. The results show that the α flaked alumina with regular morphology is obtained when the sample is held at 1000℃ for 3 hours and the atom ratio of potassium chloride and aluminum sulfate is 12︰1.
作者 徐敬尧 周小丽 徐天凤 孙敬会 伊家飞 Xu Jingyao;Zhou Xiaoli;Xu Tianfeng;Sun Jinghui;Yi Jiafei(School of Materials Science and Engineering,Baise University,Baise 533000;School of Chemical and Environmental Engineering,Baise University,Baise 533000,China)
出处 《广东化工》 CAS 2021年第11期25-26,49,共3页 Guangdong Chemical Industry
基金 广西自然科学基金重点资助项目(2016GXNSFDA380024) 2019年度广西高校中青年教师科研基础能力提升项目(2019KY0757) 2020年度广西高校中青年教师科研基础能力提升项目(2020KY19023)。
关键词 熔盐法 片状氧化铝 形貌 煅烧温度 晶型 molten salt flaky alumina morphology calcination temperature crystal structure
  • 相关文献

参考文献6

二级参考文献64

  • 1杨鹰,苏周,刘辉,周涛,叶红齐.片状氧化铝粉体的熔盐法合成[J].过程工程学报,2004,4(z1):279-283. 被引量:11
  • 2于海洋,隋万美,翟会深,牟坤昌.熔盐法二氧化钛针状晶的制备及表征[J].青岛大学学报(自然科学版),2006,19(3):44-47. 被引量:7
  • 3张倩影,朱丽慧,刘伟,黄清伟.片状氧化铝粉体的制备及应用[J].材料导报,2007,21(F05):384-387. 被引量:18
  • 4Szymanski Scott F, Rowlette Pieter, Wolden Colin A 2008, J. Vac. Sci. Technol. A, 26:1079.
  • 5George S M, Ott A W, Klaus J W. 1996, J. Phys Chem., 100:13121.
  • 6Crowell J E. 2003, J. Vac. Sci. Technol. A, 21:S88.
  • 7Lim B S, Rahtu A, Gordon R G. 2003, Nat. Mater., 2: 749.
  • 8Jim H. 2003, J. Vac. Sci. Technol. B, 21:2231.
  • 9Ritala M. in: M. Houssa (Ed). 2004, High-k Gate Di- electrics. Institute of Physics Publishing, Bristol, UK, p.7.
  • 10Rajia Matero. 2004, Atomic Layer Deposition of Oxide Films-Growth, Characterization and Reaction Mechanism Studies [Ph.D]. University of Helsinki, Finland.

共引文献30

同被引文献29

引证文献2

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部