摘要
Two-dimensional(2D)van der Waals material is a focus of research for its widespread application in optoelectronics,memories,and spintronics.The ternary compound Nb_(2)SiTe_(4) is a van der Waals semiconductor with excellent air stability and small cleavage energy,which is suitable for preparing a few layers counterpart to explore novel properties.Here,properties of bulk Nb_(2)SiTe_(4) with large in-plane electrical anisotropy are demonstrated.It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV.The carrier mobility measured at 100 K is about 213 cm^(2)·V^(-1)·s^(-1) in bulk Nb_(2)SiTe_(4),higher than the reported results.In a thin flake Nb_(2)SiTe_(4),the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K,indicating that there exists a large anisotropic transport behavior in their basal plane.These novel transport properties provide accurate information for modulating or utilizing Nb_(2)SiTe_(4) for electronic device applications.
作者
周楷尧
邓俊
陈龙
夏威
郭艳峰
杨洋
郭建刚
郭丽伟
Kaiyao Zhou;Jun Deng;Long Chen;Wei Xia;Yanfeng Guo;Yang Yang;Jian-Gang Guo;Liwei Guo(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China)
基金
Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFE0202600,2016YFA0300600,and 2017YFA0304700)
by the National Natural Science Foundation of China(Grant Nos.51922105,51772322,and 11704401)
Beijing Natural Science Foundation(Grant No.Z200005).