ITO薄膜的近零介电常数波长的调控研究

Research on the Control of the ENZ Wavelength of ITO Films

近年来,氧化铟锡(ITO)薄膜因其可实现介电常数近零(Epsilon-Near-Zero,ENZ)且易于调制的特性,已经成为非线性光学和微纳光学等领域的研究热点。文章先使用射频磁控溅射法在硅基底上制备ITO薄膜,再通过椭圆偏振光谱仪测试并拟合其光学参数,探究了本底真空度、溅射功率、溅射气压、衬底温度和膜厚等因素对ITO薄膜ENZ波长的调节机制。通过优化工艺,使ITO薄膜最短ENZ波长蓝移至1094.4nm,突破了以往文献报道的极限。该研究将ITO薄膜的ENZ波长延伸至近红外短波区域,有望实现微纳光电器件相关领域向短波方向的应用拓展。

ITO films have become a research hotspot in the fields of nonlinear optics and micro-nano optics because of its ability to achieve epsilon-near-zero and easy modulation.In this paper,ITO films were prepared on silicon substrates with the RF magnetron sputtering method.Then the optical parameters are tested and fitted by ellipsometer,which explore the adjustment mechanism of the ENZ wavelength of ITO thin films by factors such as background vacuum,sputtering power,sputtering pressure,substrate temperature and film thickness.And by optimizing the process,the shortest ENZ wavelength of the ITO film is blue-shifted to1094.4 nm,breaking the limit of previous reports.This research extends the ENZ wavelength of ITO films to the near-infrared short-wave region,and will realize the application expansion of micro-nano optoelectronic devices in the short-wave direction.