镁铝共掺杂氧化锌薄膜的制备与光电性能研究

Preparation and Optoelectronic Characteristics of Deposited Mg and Al Co-doped ZnO Thin Films

采用磁控溅射在玻璃衬底上制备镁铝共掺杂氧化锌(MAZO)薄膜。通过XRD、AFM、紫外-可见-近红外分光光度计和四探针测试仪综合分析溅射功率对MAZO薄膜结构特性、表面形貌和光电性能的影响。XRD测试表明,所有MAZO薄膜具有六方纤锌矿晶体结构,沿垂直衬底的(002)方向择优取向。AFM测试显示,所有MAZO薄膜的表面粗糙度低于10 nm。分光光度计测量结果表明,所有MAZO薄膜可见光区域平均透射率在90%以上。随着溅射功率从0增加至200 W,MAZO薄膜禁带宽度从3.46 eV增加至3.53 eV,电阻率从0.41×10^(-2)Ωcm增长至2.38×10^(-2)Ωcm,而品质因子从2.68×10^(-3)Ω^(-1)下降至0.87×10^(-3)Ω^(-1)。通过调控溅射功率,能改变MAZO薄膜中的Mg含量,进一步调节其光电性能。

Magnesium and aluminum co-doped zinc oxide(MAZO)thin films are prepared on soda-lime glass substrates by magnetron sputtering.The effects of sputtering power on the structural,surface morphology and optoelectronic properties of MAZO films are comprehensively analyzed by XRD,AFM,ultraviolet-visible-near infrared spectrophotometer and four-point-probe setup.XRD test results show that all MAZO films have a hexagonal wurtzite crystal structure,with a preferred orientation along the(002)direction vertical substrate.AFM test results show that the surface roughness of all MAZO films is less than 10 nm.The measurement results of the spectrophotometer indicate that the average transmittance in the visible region is above 90%.With the increasing of sputtering power,the band gap increases from 3.46 eV to 3.53 eV and the resistivity of MAZO thin films increases from 0.41×10^(-2)Ωcm to 2.38×10^(-2)Ωcm,while the figure of merit decreases from 2.68×10^(-3)Ω^(-1) to 0.87×10^(-3)Ω^(-1).By adjusting the sputtering power,the content of Mg in the MAZO films can be changed to further adjust its optoelectronic performances.