不同激光能量和Zr/Ti比对PLD法制备PZT薄膜结晶质量的影响

Effect of Different Laser Energies and Zr/Ti Ratio on the Crystalization Quality of PZT Thin Film Prepared by PLD Method

典型的压电材料Pb(Zr0.52Ti0.48)O3因其优异的性能,可用来制备各种类型的压电器件,一直受到许多研究者的关注。采用PLD法在SrTiO3(100)单晶衬底上制备出了不同组分的PZT薄膜,讨论了不同激光能量和Zr/Ti比对Pb(Zr0.52Ti0.48)O3薄膜结晶质量的影响,得出最佳生长PZT薄膜的条件,并分析其(002)摇摆曲线,结果显示Pb(Zr0.52Ti0.48)O3薄膜表面比较均匀,均方根粗糙度较小,体现出较好的结晶质量。最后根据谢乐公式可得出其所制备的薄膜晶粒尺寸在2~6 nm范围内,可以用于器件制作。

Pb(Zr0.52Ti0.48)O3 is a typical piezoelectric material.It can be used to prepare all kinds of piezoelectric devices because of its excellent properties,and it has been widely concerned by many researchers.PZT thin films with different compositions were prepared on SrTiO3(100)single crystal substrate by PLD method.The effects of laser energies and Zr/Ti ratio on the crystallization quality of Pb(Zr0.52Ti0.48)O3 thin films were discussed.The optimum conditions for the growth of PZT films were obtained.The rocking curves of(002)were analyzed.The results show that the Pb(Zr0.52Ti0.48)O3 films with uniform surface and small root mean square roughness are obtained,reflecting better crystallization quality.The grain size of the film prepared in the 2 to 6 nm range according to the formula can be used in device fabrication.