期刊文献+

低温沉淀法制备针状Ni掺杂In_(2)O_(3)及其气敏性能研究 被引量:3

Study on needle-like Ni-doped In_(2)O_(3) and gas-sensitive properties prepared by cryogenic precipitation
下载PDF
导出
摘要 采用低温沉淀法分别制备了纯的In_(2)O_(3)和Ni掺杂的In_(2)O_(3)纳米粉体。通过XRD、SEM和TEM等手段进行微观结构表征,并对粉体的气敏性能进行测试。结果表明:Ni的掺杂对针状形貌的形成具有直接而重要的作用,纯的In_(2)O_(3)为颗粒状结构,Ni掺杂的In_(2)O_(3)(In︰Ni摩尔比为9︰1)由大量的长度为0.4μm左右、直径为5 nm左右的针状结构所组成。其中,In︰Ni摩尔比为9︰1时所得到的Ni掺杂的In_(2)O_(3)纳米粉体(样品S4)在260℃工作温度下对50×10^(-6) Cl_(2)的灵敏度值为696.9±73.1,且具有选择性好、响应-恢复时间短等特性。最后,对可能的形貌生成机理进行了研究。 Needle-like Ni-doped In_(2)O_(3) is prepared by a facile chemical route under a low temperature of 60℃without any surfactant or template.The morphological features are analyzed by XRD,SEM and TEM,and the gas sensing characteristics of the obtained products are also studied.The results demonstrate that the doping of Ni plays a direct and important role in the formation of needle-like morphology,as the pure In_(2)O_(3) consists of large irregular nanospheres,while the Ni-doped In_(2)O_(3)(molar ratio of In︰Ni is 9︰1)consists of large needle-like with 5 nm in width and 0.4μm in length.The sensor based on the needle-like Ni-doped In_(2)O_(3)(sample S4)exhibits sensitivity of 696.9±73.1 for 50×10^(-6) Cl_(2) at 260℃.The sensor also has satisfactory selectivity,quickly response and short recover time.Finally,the formation mechanism is studied.
作者 周星宇 方正 李培 ZHOU Xingyu;FANG Zheng;LI Pei(School of Electrical Engineering and Automation,Jiangxi University of Science and Technology,Ganzhou 341000,China)
出处 《传感器与微系统》 CSCD 北大核心 2021年第9期14-17,21,共5页 Transducer and Microsystem Technologies
基金 江西省教育厅科学技术研究项目青年项目(GJJ180485)。
关键词 针状形貌 In_(2)O_(3)纳米粉体 Ni掺杂 低温沉淀法 气敏性能 needle-like morphology In_(2)O_(3)nano-powder Ni-doped low-temperature precipitation synthesis gas-senstive properties
  • 相关文献

参考文献6

二级参考文献28

  • 1刘如征,全宝富,刘凤敏,陈丽华,刘敏.In_2O_3基甲醛传感器的研制[J].电子元件与材料,2006,25(11):15-17. 被引量:11
  • 2张丽娟 胡慧芳 王志勇 魏燕 贾金风.物理学报,2010,59:527-527.
  • 3刘厚祥, 李昭临, 李书涛, 韩景诚, 吴存恺 1988 物理学报 37 470.
  • 4Wang X, Li Y, Li X, Yu J, Al-Deyab S S, Ding B 2014 Sensor. Actuat. B: Chem. 203 333.
  • 5薄晓庆, 刘唱白, 李海英, 刘丽, 郭欣, 刘震, 刘丽丽, 苏畅 2014 物理学报 63 176803.
  • 6Li W, Ma S, Yang G, Mao Y, Luo J, Cheng L, Gengzang D, Xu X, Yan S 2015 Mater. Lett. 138 188.
  • 7Xu X L, Chen Y, Ma S Y, Li W Q, Mao Y Z 2015 Sensor. Actuat. B: Chem. 213 222.
  • 8吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健, 徐天宁 2010 物理学报 59 5022.
  • 9Liang X, Kim T H, Yoon J W, Kwak C H, Lee J H 2015 Sensor. Actuat. B: Chem. 209 934.
  • 10Kim H, An S, Jin C, Lee C 2012 Curr. Appl. Phys. 12 1125.

共引文献13

同被引文献17

引证文献3

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部