Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction arrays via a black silicon/platinum contact approach

A room temperature sub-bandgap near-infrared (λ> 1100 nm) Si photodetector with high responsivity achieved. The Si photodetector features black Si made by wet etching Si (100),Si/PtSi nano-Schottky junctio arrays made from black Si/Pt contacts,and chemical and field-effect passivation of black Si. Responsivities a147.6,292.8,and 478.2 m A/W at reverse voltages of-1.0,-1.5,and-2.0 V for 1550 nm light,respectively,wit corresponding specific detectivities being 9.79×10^(8),1.88×109,and 2.97×10^(9)cm·Hz^(1∕2)∕W. This work dem onstrates a practical room temperature sub-bandgap near-infrared Si photodetector that can be made in a faci and large-scale manner.