衬底温度对射频溅射CeO_(2)薄膜微观结构的影响

Influence of Temperature of Substrate during RF Sputtering on Microstructure of CeO_(2) Thin Films

为了通过射频溅射金属Ce靶与CeO_(2)靶能得到相同结构、相同性能的CeO_(2)薄膜,采用射频反应磁控溅射技术在玻璃衬底上沉积CeO_(2)薄膜,通过调控基体温度,分析其对薄膜成分、结构、形貌的影响规律,分别采用X射线衍射仪、场发射扫描电子显微镜、原子力显微镜对薄膜结构性能进行表征。结果表明:在沉积温度为600℃下,溅射金属Ce靶制备的CeO_(2)薄膜取向度最高,表面光滑平整,表面平均粗糙度只有1.03 nm,通过改变沉积温度能够很好地控制薄膜表面颗粒形貌。

In order to obtain the ceria film with the same structure and the same performance by radio frequency(RF) sputtering metal Ce target and CeO_(2) target, the RF reactive magnetron sputtering technology was used to deposit CeO_(2) film on the glass substrate, and the film composition and structure were adjusted by controlling the substrate temperature. The influence of morphology was characterized by X-ray diffractometer, field emission scanning electron microscope and atomic force microscope. The results showed that the CeO_(2) film prepared by sputtering a metal Ce target has the highest orientation at 600 ℃, the surface is smooth and flat, and the average surface roughness is only 1.03 nm. By changing the deposition temperature, the surface morphology of the film can be well controlled.