改良泡生法生长720 kg级大尺寸蓝宝石晶体

Growth of 720 kg Large-Sized Sapphire Crystal by Modified Kyropoulos Method

为进一步满足当前新型显示技术、航天、航空等领域对大尺寸、高品质蓝宝石材料的需求,本文采用改良泡生法,通过自主研发的蓝宝石晶体生长设备,生长出质量达720 kg的大尺寸、高品质蓝宝石晶体。该晶体可加工成直径640 mm,无气泡和小角度晶界的大尺寸蓝宝石面板。对晶体上、中、下不同位置的品质进行检测分析,得到晶体的位错密度小于475 cm^(-2),摇摆曲线半高宽(FWHM)小于0.0046°,在400~4000 nm波段的透过率大于83%,表明晶体内部的微缺陷得到有效控制,晶片的结晶性能和光学性能极佳,达到了预期。

In order to further meet the current demand for large-sized and high-quality sapphire materials in the current new display technology,aerospace,aviation and other fields,this paper adopts the modified Kyropoulos method and self-developed furnace to grow large-sized,high-quality sapphire crystals weighing 720 kg.Sapphire panel with diameter of 640 mm is obtained from the sapphire,and the panel has no bubbles and low-angle grain boundaries.The quality of the upper,middle and lower parts of the crystal was detected.The results show that the dislocation density of the crystal is less than 475 cm^(-2),the FWHM is less than 0.0046°,and the transmittance in the band of 400 nm to 4000 nm is more than 83%.It shows that the micro defects in the crystal are controlled,and the crystalline properties and optical properties of the crystal are excellent.