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随机振动对某波控专用芯片可靠性的影响分析

Analysis of the Influence of Random Vibration on the Reliability of a Special IC
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摘要 近年来,半导体集成电路失效分析技术广泛应用,通过失效分析来查找失效原因、确定失效机理,优化产品设计成为提升产品核心竞争力的重要方法。随机振动作为集成电路芯片失效的重要原因之一,对其作用机理及影响因素的分析,有助于充分评估产品可靠性及应用环境。本文通过失效分析以及有限元随机振动分析法,对某波控专用电路进行失效分析,定位问题。并基于ANSYS有限元软件进行计算,重点关注键合丝受随机振动载荷作用下的变形及应力状态,从而得出产品安全工作应力范围,保证产品在留有充分裕量的环境下工作。 In recent years,the failure analysis technology of integrated circuits has been widely used.Determining the failure cause and failure mechanism can effectively optimize the product design and improve the reliability.Random vibration is one of the important reasons for IC chip failure.Analysis of its mechanism and influencing factors is helpful to fully evaluate the product reliability and application environment.In this paper,the failure of a special IC is analyzed by the failure analysis technology and the finite element simulation.The deformation and stress state of the bonding wire under random vibration load is calculated based on ANSYS.Thus,the safe working stress range of the product is obtained and it will ensure that the product can work in the environment with sufficient margin.
作者 马敏舒 王媛 侯晨琛 MA Min-shu;WANG Yuan;HOU Chen-chen(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060)
出处 《环境技术》 2021年第4期29-34,共6页 Environmental Technology
关键词 随机振动 有限元分析 键合丝 失效分析 random vibration finite element analysis bonding wire failure analysis
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  • 1SHIRLEY C G, HONG C E. Optimal Acceleration of Cyclic THB Tests for Plastic Packages [C] //Proceedings of IEEE International Reliability Physics Symposium. Nevada: Las Vegas, 1991: 12-21.
  • 2GUNN J, CAMENGA R, MALIK SK. Rapid Assessment of the Humidity Dependence of IC Failure Modes by Use of HAST [C] //Proceedings of IEEE International Reliability Physics Symposium. Arizona: Phoenix, 1983: 66-72.
  • 3PECK D S. A Comprehensive Model for Humidity Testing Correlation [C] //Proceedings of IEEE International Reliability Physics Symposium. California: Anaheim, 1986: 44.
  • 4LAWSON R W. A Review of the Status of Plastic Encapsulated Semiconductor Component Reliability [J]. British Telecom Technology Journal, 1984, 2 (2): 95-111.
  • 5DUNN C F, MCPHERSON J W. Recent Observations on VLSI Bond Pad Corrosion Kinetics [J] . Journal of The Electrochemical Society, 1988, 135 (3): 661-665.
  • 6HUANG C H J, ROST T A, MCPHERSON J W. Degradation of off-state Leakage in PMOS Transistors under Hotcarrier Injection [C] //IEEE International Integrated Reliability Workshop Final Report. California: Lake Tahoe, 1994: 63-68.
  • 7LA ROSA G, GUARIN F, RAUCH S, et al. NBTI- channel Hot Carrier Effects in PMOSFETs in Advanced CMOS Technologies [C] //Proceedings of IEEE International Reliability Physics Symposium. Colorado: Denver, 1997 : 282-286.
  • 8JENSEN F.Electronic Component Reliability Fundamentals, Modelling, Evaluation, and Assurance [J] . Microelectronics Reliability, 1997, 37 (6): 975-975.
  • 9BLISH R, DELLIN T, HUBER S, et al. Critical Reliability Challenges for the International Technology Roadmap for Semiconductor (ITRS) [C]//SEMATECH, Technology Transfer. 2003.
  • 10[美]坎贝尔.微电子制造科学原理与工程技术(第二版)[M].北京:电子工业出版社,2003.

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