SiC MOSFET 参数体系及测试方法 研究

Research on Parameter System and Test Method of SiC MOSFET

通过介绍SiC MOSFET的器件特性,重点研究了与Si基器件有不同特性的关键参数,如阈值电压、体二极管参数及短路参数,提出了全面、科学的SiC MOSFET参数体系;通过分析国内外测试方法现状及其适用性,对与SiC MOSFET自身特性有关的参数,如阈值电压、阈值电压稳定性等参数,进行了测试方法的重点研究。

This paper introduces the device characteristics of SiC MOSFET firstly,focuses on the key parameters that differ from the characteristics of Si-based devices,such as threshold voltage,body diode parameters and short circuit parameters,puts forward a comprehensive and scientific SiC MOSFET parameter system.This paper also analyzes the current situation and applicability of test methods at home and abroad,and focuses on the test methods related to the characteristics of SiC MOSFET,such as threshold voltage,threshold voltage stability and so on.