GaAs薄膜电池光电转换特性研究

Photoelectric Conversion Characteristics of GaAs Thin Film Cells

微纳减反层结构及微纳金属等离激元结构能有效提高砷化镓(GaAs)薄膜光伏器件在可见到近红外波段的吸收效率。本文采用有限元法(FEM)分析了微纳减反层对GaAs光伏器件的光谱吸收率的影响,并获得相应结构的光电转换特性。进一步探究了在器件内部布置金纳米线对相应结构的光电特性的影响。对应的计算结果显示,微纳减反层结构及金属纳米线结构能有效增强器件的电学输出特性,并提高器件光电转换能力到19.6%。掌握微结构对光伏器件内部光电特性的影响规律可为器件设计和制备提供有益指导。

The absorption efficiency of GaAs thin film photovoltaic devices from visible to nearinfraredband can be effectively improved by micro-nano anti-reflection cover (ARC) and micro-nanometal structure. In this paper, finite element method (FEM) is used to analyze the influence of themicro-nano anti-reflection cover on the spectral absorption of devices, and the photoelectric conversioncharacteristics of the corresponding structures are obtained. The influence of the arrangementof gold nanowires on the photoelectric characteristics is further explored. The results show that themicro-nano structure can effectively improve the photoelectric conversion capability. Mastering theinfluence law on the internal photoelectric characteristics can provide useful guidance for the devicedesign and preparation.