基于发射光谱的微波等离子化学气相沉积中的电子温度诊断

Electron Temperature Diagnostics in Microwave Plasma Chemical Vapor Deposition by Optical Emission Spectroscopy

在气压40~80 Pa和微波功率400~800 W条件下,使用光学发射光谱法(OES)对Ar、CH4等气体产生的等离子体进行电子温度诊断。实验结果表明,OES法测试得到的电子温度介于0.75 eV到4 eV之间。在含碳气体的微波同轴线型等离子体中使用OES方法进行诊断是可行的,这些研究结果可以进一步拓展OES方法在等离子体增强化学气相沉积领域中的应用。

The electron temperature of the Ar/CH4 plasma was diagnosed under the pressure of 40~80 Pa and the microwave power of 400~800 W by Optical Emission Spectrometry(OES).The experimental results show that the electron temperature obtained by the OES is between 0.75 eV and 4 eV under the above experimental conditions.Through measurement of Ar or CH4 plasma,it is feasible to use the OES method in microwave coaxial plasma with carbon-containing gas.This research can further expand the application of the OES method in the PECVD field.