基于圆周法的IGCT芯片门/阴极性能缺陷检测方法与实现

Detection Method and Implementation of IGCT Chip Gate/Cathode Performance Defect Based on Circumferential Method

功率半导体器件IGCT芯片的门/阴极之间设计的呈多圈环状平面布局的等效二极管单元数量庞大,为准确快速检测每个单元的特性并筛查出缺陷单元的位置,设计了基于圆周运动动态检测的IGCT芯片门/阴极阻断特性测试台。该测试系统中用于芯片阴极的探针采用软探针滑动接触,用于门极的探针采用滚轮探针滚动接触,解决了快速运动中直流测试信号的传输问题,给出了测试电路原理,配套设计有实时观测显微镜和三维可调旋转平台精确控制位移。该系统有别于在芯片上逐个打点测试的传统方法,满足了测试准确性、无损检测等需要,相比较逐点测试方法提高测试效率15倍以上,为芯片规模化生产中此项性能的在线检测提供了有效手段。

A large number of equivalent diode units designed between the gate/cathode of a power semiconductor device IGCT chip with a multi-circle circular planar layout. In order to detect the characteristics of each unit accurately and quickly and to screen the position of the defect unit, the IGCT chip gate/cathode blocking characteristic test bench based on circular motion dynamic detection was designed. The probe used for chip cathode in the test system adopts soft probe sliding contact, and the probe used for gate pole uses roller probe rolling contact, which solved the transmission problem of DC test signal in fast motion, and gave the principle of test circuit. The system is different from the traditional method of point-by-point test, which not only meets the needs of test accuracy and nondestructive testing, but also improves the test efficiency by more than 15 times compared with point-by-point test method, which provides an effective means for on-line detection of this performance in chip scale production.