衬底温度对磁控溅射ZrN薄膜结构和物理性能的影响

Effect of substrate temperature on structural and physical properties of ZrN films by magnetron sputtering

采用直流反应磁控溅射法在Si(111)衬底上制备了ZrN薄膜,通过X射线衍射仪、拉曼光谱仪、场发射扫描电子显微镜、原子力显微镜以及霍尔测量等测试分析手段表征了薄膜的微观结构、表面形貌及电学性能。结果表明,制备的ZrN薄膜为立方相NaCl结构,具有(111)面择优取向。在Ts=550~650℃时,薄膜的结晶性最佳。薄膜呈柱状生长,晶粒尺寸会随着衬底温度的升高先增大后减小,当Ts=550~750℃时,表面出现三角锥状晶粒。制备的ZrN薄膜表面较为平整,表面粗糙度在3.9~6.67 nm之间。测得薄膜的电阻率大小在1.43~24.5×10^(-3)Ω·cm之间,且电阻率与薄膜的结晶性以及晶粒尺寸相关;薄膜的载流子浓度在0.869~4.38×10^(20) cm^(-3)之间,Ts=550~650℃的薄膜电学性能较好。

In this work,zirconium nitride(ZrN)thin films are deposited on Si(111)substrates by direct current reactive magnetron sputtering.The microstructure,surface morphology and electrical properties of ZrN thin films are characterized by X-ray diffraction,Raman spectroscopy,field emission scanning electron microscopy,atomic force microscopy and Hall measurement system.The results show that the ZrN films are cubic,NaCl-type crystal structure with a preferred(111)orientation.The best crystallinity of the films is obtained when Ts is between 550℃and 650℃.The growth structure of the films is columnar,and the grain size increases first and the decreases with the increase with substrate temperature.Triangular pyramid-shaped grains are observed on the surface when Ts is between 550℃and 750℃.The deposited film is relatively smooth and the RMS roughness is 3.9~6.67 nm.The film resistivity is 1.43~24.5Ω·cm,which is related with the crystallinity and grain size of the films.The carrier concentration of the film is 0.869~4.38×10^(20)/cm^(3),and the films with Ts of 550℃to 650℃have better electrical properties.