超大规模集成电路内部单粒子翻转效应仿真

Simulation of Single Event Upset Effect in VLSI

针对超大规模集成电路特征尺寸的逐渐减小,对空间辐射环境越加敏感,从而引发了单粒子翻转效应,造成程序运行出现错误的问题,研究超大规模集成电路内部单粒子翻转效应,并提出抗辐射加固策略。研究以仿真的形式进行,首先对单粒子翻转效应物理机制进行了分析,为后续研究提供指导方向,然后选择被测器件,搭建效应测试平台,设置测试条件以及阐述单粒子翻转效应仿真测试方法。结果表明:脉冲激光的能量越大,单粒子翻转概率越高;只有激光光束照射到超大规模集成电路芯片有源区时,才可获得最低和最大的翻转截面;激光脉冲注量对单粒子翻转截面测试有影响;存储数据和测试模式对单粒子翻转效应测试都无影响。

The reduction of characteristic size of VLSI is sensitive to space radiation environment,resulting in single event upset effect and wrong program operation.Due to this reason,the internal single event upset effect of VLSI was studied in detail to propose a radiation hardened strategy.First of all,the physical mechanism of single event upset effect was thoroughly analyzed.Secondly,the device under test was selected.Then,the effect test platform was built to set the test conditions.Finally,the simulation test method of single event upset effect was clarified.The results show that the higher the energy of the large pulsed laser is,the higher the probability of single event upset is;Only when the laser beam irradiates the active region of the VLSI chip,the minimum and maximum upset cross sections can be obtained;The fluence of laser pulse has a crucial influence on the measurement of single event upset cross section;However,the stored data and test mode have no influence on the measurement of single event upset effect.